Budhi Singh

Tran Thi Uyen

Niu Jingjie

Changyoung Kim

Sungpyo Baek

Jongmin Noh

Seongkweon Kang

Haeju Choi

Biswajit Das

Prashant Singh

Hyunho Yoo

Chanwoo Kang

Seunghyuk Choi

Hyeonje Son

Chaeyeon Shin

Jae Hyeok Ju

Hongyue Jing

Sumin Jeon

Yang Yajie

Jaeho Jeon

Jingyuan Jia

Sung Kyu Jang

Shen Lai

Jiao Xu

Sima Umrao

Wang Min

Jiyoun Youn

Ji Eun Lee

Jiho Yang

This lab conducts research on nanoscale electronic devices, development of next-generation semiconductor logic and memory materials/devices, manufacturing technology for ultrathin nanomaterials and hybrid heterojunction structures, development of future ICT information processing/storage/transmission devices using novel functional nanomaterials, and development of electronic/optoelectronic devices based on new principles.

나노전자소자, 차세대 반도체 로직 및 메모리 소재/소자 개발, 극박막 나노소재 및 하이브리드 이종접합 구조 제조 기술, 신기능 나노소재를 활용한 미래 ICT 정보 연산/저장/전송 소자 개발, 새로운 원리의 전자/광전 소자 개발을 연구합니다.

Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor.

Synergistic Pyroelectric-Bolometric Coupling in Tellurene Nanowire for Energy-Efficient Artificial Vision.

Atomically sharp heteroepitaxial Hf2C edge contacts enabling barrier-free carrier injection in 2D HfSe2 semiconducting channels

All-Optical Control of Bidirectional Polarization Switching in Ferroelectric Heterostructures for Neuromorphic and In-Memory Computing.

Van der Waals Ferroelectric CuInP2S6-based Multi-slope In-memory Probabilistic Computing

High-κ dielectric van der Waals integration on 2D semiconductors for three-dimensional complementary logic systems

Bidirectional Polarization-Controlled Nonvolatile Ferroelectric SnS/α-In2Se3 van der Waals Heterojunction for Reconfigurable Logic-in-Memory

Quantum Phase Transitions in Graphene Coupled to a Twisted WSe2 Moiré Ferroelectricity

Asymmetric Contact van der Waals Ferroelectric Transistors for Self-Powered Multifunctional Artificial Visual System

Steep-Switching Memory FET for Noise-Resistant Reservoir Computing System

Reconfigurable Neuron and Synapse Operations in a Steep-Switching Nonvolatile Transistor

Steep-Slope CuInP2S6 Ferroionic Threshold Switching Field-Effect Transistor for Implementation of Artificial Spiking Neuron

Bifacially Engineered Perovskite-based Synaptic Memristors Achieve High Linearity and Symmetricity for Accurate and Robust Neuromorphic Computing

Uniqueness and Future Perspective of 2D Ferroelectric Devices: Applications in Emerging Computing Paradigms and Hardware Security

More-than-Moore Approaches Implemented Using van der Waals Heterostructures

Strategic Development of Memristors for Neuromorphic Systems: Low-Power and Reconfigurable Operation

Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect Transistors

Post-Polymerization Strategy via Dual Site Clicking for Synthesizing Intrinsically Cross-Linkable Semiconducting Polymers

Spiking Neural Network Integrated with Impact Ionization Field-Effect Transistor Neuron and a Ferroelectric Field-Effect Transistor Synapse

Carrier type and density dependence of impact ionization characteristics in WSe2

Ferroelectric Stochasticity in 2D CuInP2S6 and its Application for True Random Number Generator

One-Shot Remote Integration of Macromolecular Synaptic Elements on a Chip for Ultrathin Flexible Neural Network System

High-κ dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low-Power Steep-switching Computing Devices

Frontier sustainable nanotechnology of South Korea today

Dual-Logic-in-Memory Implementation with Orthogonal Polarization of van der Waals Ferroelectric Heterostructure

Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing Applications

Electronic and electrocatalytic applications based on solution-processed two-dimensional platinum diselenide with thickness-dependent electronic properties

Anisotropy of impact ionization in WSe2 field effect transistors

A steep-switching impact ionization-based threshold switching field-effect transistor

SnS/MoS2 van der Waals heterojunction for in-plane ferroelectric field-effect transistors with multibit memory and logic characteristics

Intact Metal/Metal Halide van der Waals Junction Enables Reliable Memristive Switching with High Endurance

A steep switching WSe2 impact ionization field-effect transistor

β-Mercaptoethanol-Enabled Long-Term Stability and Work Function Tuning of MXene

Pulsed gate voltage measurement for charge mobility extraction of organic transistors

Broad-Spectrum Photodetection with High Sensitivity Via Avalanche Multiplication in WSe2

Enhanced Electromagnetic Absorption of Cement Composites by Controlling the Effective Cross-sectional Area of MXene Flakes with Diffuse Reflection Based on Carbon Fibers

Extrapolation method for reliable measurement of Seebeck coefficient of organic thin films

Novel Dithienopyrrole-Based Conjugated Copolymers: Importance of Backbone Planarity in Achieving High Electrical Conductivity and Thermoelectric Performance

Extrapolation Method for Reliable Measurement of Seebeck Coefficient of Organic Thin Films

Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics heterostructure

Single-Crystalline Pyramidal TiCx Particles Grown by Biphase Diffusion Synthesis

A general fruit acid chelation route for eco-friendly and ambient 3D printing of metals

Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications

Emergence of multiple negative differential transconductance from a WSe2 double lateral homojunction platform

Two-Dimensional MXene Synapse for Brain-Inspired Neuromorphic Computing

Complementary Driving between 2D Heterostructures and Surface Functionalization for Surpassing Binary Logic Devices

Modulation of the Electronic Properties of MXene (Ti3C2Tx) via Surface-Covalent Functionalization with Diazonium

High-responsivity PtSe2 photodetector enhanced by photogating effect

Fabrication of van der Waals heterostructures through direct growth of rhenium disulfide on van der Waals surfaces

A-D-A Type Semiconducting Small Molecules with Bis(alkylsulfanyl)methylene Substituents and Control of Charge Polarity for Organic Field-Effect Transistors

MXenes for future nanophotonic device applications

2D MXene–TiO2 Core–Shell Nanosheets as a Data-Storage Medium in Memory Devices

Work Function Engineering of Electrohydrodynamic-Jet-Printed PEDOT Electrodes for High-Performance Printed Electronics

Multiple Negative Differential Resistance Heterojunction Device and its Circuit Application to Ternary Static Random Access Memory

Functionalized Organic Material Platform for Realization of Ternary Logic Circuit

Heterogeneous Integration of 2D Materials: Recent Advances in Fabrication and Functional Device Applications

Scalable 2D Lateral Metal/Semiconductor Junction Fabricated with Selective Synthetic Integration of Transition-Metal-Carbide (Mo2C)/-Dichalcogenide (MoS2)

Homogeneous platinum diselenide metal/semiconductor coplanar structure fabricated by selective thickness control

Black phosphorus photodetector integrated with Au nanoparticles

Large-Area MXene Electrode Array for Flexible Electronics

Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction

Transition-Metal-Carbide (Mo2C) multi-period gratings for realization of high-sensitivity and broad-spectrum photodetection

Rhenium Di-Selenide (ReSe2) Near-Infrared Photodetector: Performance Enhancement by Selective p-Doping Technique

Avalanche Carrier Multiplication in Multilayer Black Phosphorus and Avalanche Photodetector

Plasmonic Transition Metal Carbide Electrodes for High-Performance InSe Photodetectors

A Neuromorphic Device Implemented on a Salmon-DNA Electrolyte and its Application to Artificial Neural Networks

Polarity-Control in Single Transistor Based on Transition-Metal Dichalcogenides for Complementary Logic Circuits

Wafer-scale and patternable synthesis of NbS2 for electrodes of organic transistors and logic gates

Versatile Doping Control of Black Phosphorus and Function

SUPER-STEEP SWITCHING ELEMENT AND INVERTER ELEMENT USING SAME

스택 구조체 및 그 제조 방법, 그리고 이를 적용한 커패시터, 그리고 이를 적용한 트랜지스터, 그리고 이를 적용한 염료 감응 태양전지, 그리고 이를 적용한 창문 유리 코팅용 건축 필름

ヘテロ接合構造素子及びその製造方法、これを適 用した電界効果トランジスタ、これを適用した人 工視覚システム、これを適用した太陽電池、これ を適用したガスセンサ、及びこれを適用した圧電 素子

이종 접합 구조 소자 및 그 제조 방법, 그리고 이를 적용한 전계 효과 트랜지스터, 그리고 이를 적용한 인공 시각 시스템, 그리고 이를 적용한 태양 전지, 그리고 이를 적용한 가스 센서, 그리고 이를 적용한 압전 소자

MULTI-VALUED MEMORY DEVICE BASED ON NEGATIVE TRANSCONDUCTANCE USING MONOLITHIC WSe2 THIN FILM

スタック構造体及びその製造方法、これを適用 したキャパシタ、これを適用したトランジスタ、これを適用した色素増感太陽電池、及びこれ を適用した窓ガラスコート用建築フィルム (자연 산화막 공정을 이용한 이차원 반도체 기반 고품위 게이트 스택 및 이를 활용한 저전력 전자 소자)

SUPER-STEEP SWITCHING DEVICE AND INVERTER DEVICE USING THE SAME

접합 구조 소자, 이의 제조 방법 및 이를 포함하는 인-메모리 컴퓨터 소자

터널링 전계 효과 트랜지스터, 네거티브 커패시턴스 전계 효과 트랜지스터, 및 I-MOS 등과 같이 고속 스위칭이 가능한 초경사 스위칭 소자 및 이를 이용한 인버터 소자와 정보처리 소자

접합 구조 소자, 이의 제조 방법 및 이를 포함하는 컴퓨팅 장치

맥신 시냅스 장치

超傾斜スイッチング素子及びこれを用いたインバータ素子 (초경사 스위칭 소자 및 이를 이용한 인버터 소자)

초경사 스위칭 소자 및 이를 이용한 인버터 소자

2차원 물질 및 그 제조 방법

부성 트랜스컨덕턴스 소자 및 이를 이용한 다치 메모리 소자

NEGATIVE TRANSCONDUCTANCE DEVICE AND MULTI-VALUED INVERTER LOGIC DEVICE USING THE SAME

THREE-DIMENSIONAL SEMICONDUCTOR INTEGRATED CIRCUIT

광검출 소자 및 이의 제조방법

PHOTODETECTOR AND ITS MANUFACTURING METHOD

부성 트랜스컨덕턴스 소자 및 이를 이용한 다치 인버터 논리 소자

부성 트랜스컨덕턴스 소자, 이를 이용한 부성 저항 소자 그리고 다치 논리 소자

광 검출 장치, 이의 제조방법 및 이를 이용한 광 검출 방법

3차원 반도체 집적 회로

자기저항 구조체 및 그 제조 방법, 이를 구비하는 전자소자

시냅스 소자 및 이의 제조 방법

PROTEIN-BASED NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

부성 미분 전달컨덕턴스 특성을 갖는 반도체 소자 및 그 제조 방법

ELECTRIC DEVICE BASED ON BLACK PHOSPHOROUS SINGLE CHANNEL WITH MULTI-FUNCTION AND METHOD OF MANUFACTURING THE SAME

도체-반도체 측면 이종접합구조, 이들의 제조방법, 이를 포함하는 스위칭 소자 및 이차원 전도성 박막의 제조방법

원자 스위칭 장치

비휘발성 메모리 소자 및 이의 제조방법

2차원 맥세인 박막의 제조방법

터널링 전계효과 트랜지스터

다기능성 단일 채널 흑린 기반 전자 소자 및 이의 제조 방법

단백질 기반의 비휘발성 메모리 소자 및 이의 제조 방법

2차원 나노박막을 전사시키는 방법

2차원 박막 표면 처리 방법 및 이를 포함하는 전자 소자의 제조 방법

2차원 맥세인 박막의 제조방법, 이를 이용한 전자 소자의 제조 방법, 2차원 맥세인 박막을 포함하는 전자 소자

트랩층을 포함하는 부성 미분 저항 소자 및 그 제조 방법

공명 터널 소자 및 그 제조 방법

HETEROGENEOUS LAYERED STRUCTURE, METHOD OF PREPARING THE HETEROGENEOUS LAYERED STRUCTURE, AND ELECTRONIC DEVICE INCLUDING THE HETEROGENEOUS LAYERED STRUCTURE

MAGNETIC RESISTANCE STRUCTURE, METHOD OF MANUFACTURING THE MAGNETIC RESISTANCE STRUCTURE, AND ELECTRONIC DEVICE INCLUDING THE MAGNETIC RESISTANCE STRUCTURE

Sungjoo Lee

Professor at Sungkyunkwan University (SKKU), Head of SKKU Advanced Institute of Nanotechnology (SAINT), Department of Nano Engineering

Nanoscale Devices & Technology Lab.

교수님 소개

Sungjoo Lee

연구실 소개

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor.

Synergistic Pyroelectric-Bolometric Coupling in Tellurene Nanowire for Energy-Efficient Artificial Vision.

Atomically sharp heteroepitaxial Hf2C edge contacts enabling barrier-free carrier injection in 2D HfSe2 semiconducting channels

연구실 보유 특허

대학별 입시끈

우리 연구실 모집

교수님 소개

Sungjoo Lee

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor.

Synergistic Pyroelectric-Bolometric Coupling in Tellurene Nanowire for Energy-Efficient Artificial Vision.

Atomically sharp heteroepitaxial Hf2C edge contacts enabling barrier-free carrier injection in 2D HfSe2 semiconducting channels

연구실 보유 특허

최근 3년간 연구실적 높은 연구실

대학별 입시끈

우리 연구실 모집