Ki-Jung Park

Kihan Kim

Seungyong Lee

Seongwoo Seo

Sungjin Kim

Hyogi Seo

Kyungmin Kim

Yongho Oh

Hyunchul Kim

Jea-Shik Shin

Daekeun Yoon

Namhyung Kim

Younga Jo

Jongwon Yun

Donghyun Kim

Seungyoon Jung

Myeong-Gyo Seo

Sooyeon Kim

Kiryong Song

Jungsoo Kim

Gihyun Lim

Minjae Jo

Junghwan Yoo

Heekang Son

Doyoon Kim

Jaewon Jang

The High-Speed Integrated Systems Laboratory at Korea University focuses on research in high-speed integrated circuits and systems.

고속집적시스템 연구실은 고려대학교 소속으로, 고속 집적 회로 및 시스템 연구에 중점을 둔다.

A 140-GHz FMCW Radar Transceiver With Dual-Lens Packaging for Improved Beam Alignment in 65-nm CMOS Technology

A 700-GHz Integrated Signal Source Based on 130-nm InP HBT Technology

A 10–100-GHz Wideband Amplifier With Low-Impedance Coupled Lines in SiGe BiCMOS

A 272–341-GHz Integrated Amplifier-Frequency-Doubler Chain in 65-nm CMOS

Voltage-driven gigahertz frequency tuning of spin Hall nano-oscillators

600-GHz High-Power Signal Sources Based on 250-nm InP HBT Technology

A Scalable 300-GHz Multichip Stitched CMOS Detector Array

A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range

A Wideband CMOS On-Chip Terahertz Frequency Detector with Slow-Wave Structure

Terahertz Signal Source and Receiver Operating Near 600 GHz and Their 3-D Imaging Application

300-GHz InP HBT Quadrature VCO with Integrated Mixer

A 300-GHz CMOS 7-by-7 detector array for optics-less THz imaging with scan-less target object

A 270-GHz CMOS Triple-Push Ring Oscillator with a Coupled-Line Matching Network

A 300-GHz SPST Switch With a New Coupled-Line Topology in 65-nm CMOS Technology

290-GHz 17-dB ON-/OFF-Ratio Modulator With Resonance Control Varactors

A 283-GHz Fully Integrated Phase-Locked Loop Based on 65-nm CMOS

Three-Dimensional Terahertz Tomography with Transistor-Based Signal-Source and Detector Circuits Operating Near 300 GHz

Characterization of a CMOS 135-GHz Low Noise Amplifier with Two Different Noise Measurement Methods

Compatision of Two Layout Options for 110-GHz CMOS LC Cross-Coupled Oscillators

A 645-GHz InP heterojunction bipolar transistor harmonic oscillator

300-GHz Direct and Heterodyne Active Imagers Based on 0.13-μm SiGe HBT Technology

A D-Band CMOS Amplifier With a New Dual-Frequency Interstage Matching Technique

Terahertz Reflection-Mode Biological Imaging Based on InP HBT Source and Detector

A 280-GHz 10-dBm Signal Source based on InP HBT Technology

A 260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology

Two 122-GHz Phase-Locked Loops in 65-nm CMOS Technology

D2ART: Direct Data Accessing from Passive RFID Tag for infra-less, contact-less, and battery-less pervasive computing

A 310 – 340 GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25-μm InP HBT Technology

Compact mm-wave CMOS Distributed Amplifier Using Series-Peaking Line and M-derived Section

D-band Stacked Amplifiers based on SiGe BiCMOS Technology

A D-band Active Imager in a SiGe HBT Technology

D-Band Heterodyne Integrated Imager in a 65-nm CMOS Technology

Two 320 GHz Signal Sources based on SiGe HBT Technology

An Oscillator and a Mixer for 140-GHz Heterodyne Receiver Front-End based on SiGe HBT Technology

300-GHz Integrated Heterodyne Receiver and Transmitter with On-Chip Fundamental Local Oscillator and Mixers

300 GHz InP HBT Oscillators based on Common-Base Cross-Coupled Topology

A 248 – 262 GHz InP HBT VCO with Interesting Tuning Behavior

A 200-GHz Heterodyne Image Receiver with an Integrated VCO in a SiGe BiCMOS Technology

A Triple-Push Voltage Controlled Oscillator in 0.13-um RFCMOS Technology Operating near 177 GHz

Bulk acoustic wave resonators of suppressed energy loss using improved lateral structure

Balanced RF Duplexer with Low Interference using Hybrid BAW Resonators for LTE Application

A 120 GHz Voltage Controlled Oscillator Integrated with 1/128 Frequency Divider Chain in 65 nm CMOS Technology

Characterization and analysis of harmonic emissions in nonlinear bulk acoustic wave resonators

A SiGe 135-GHz Amplifier with Inductive Positive Feedback Operating near fmax

Hybrid Bulk Acoustic Wave Structure for Temperature Stability of LTE Applications

Effect of Device Layout on the Stability of RF MOSFETs

Phase noise calculation and variability analysis of RFCMOS LC oscillator based on physics-based mixed-mode simulation

400 GHz HBT Differential Amplifier Using Unbalanced Feed Networks

A 135 GHz Differential Active Star Mixer in SiGe BiCMOS Technology

SiGe 140GHz ring-oscillator-based injection-locked frequency divider

CMOS 138-GHz Low Power Active Mixer with Branch-line Coupler

The Effect of Device Layout Schemes on RF Performance of Multi-finger MOSFETs

A 90-nm CMOS 144 GHz Injection Locked Frequency Divider with a Inductive Feedback

Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge

A 58-72 GHz CMOS Wideband Variable Gain Low Noise Amplifier

A Comprehensive Study of High-Q Island-Gate Varactors (IGVs) for CMOS Millimeter-Wave Applications

Self-aligned SiGe NPN transistors with 285 GHz f max and 207 GHz f T in a manufacturable technology

Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

SiGe HBTs with cut-off frequency of 350 GHz

Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

Half-terahertz operation of SiGe HBTs

A 210-GHz f T SiGe HBT with a non-self-aligned structure

Foundation of RF CMOS and SiGe BiCMOS technologies

SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications

A 0.13/spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

SiGe HBT technology with f/sub max//f/sub T/= 350/300 GHz and gate delay below 3.3 ps

RF characterization and modeling of various wire bond transitions

Scaling of SiGe heterojunction bipolar transistors

Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors

300 GHz integrated heterodyne receiver and transmitter with on-chip fundamental local oscillator and mixers

40-Gb/s circuits built from a 120-GHz f/sub T/SiGe technology

On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds

Performance and design considerations for high speed SiGe HBTs of f/sub T//f/sub max/= 375 GHz/210 GHz

Transistor design and application considerations for> 200-GHz SiGe HBTs

The revolution in SiGe: Impact on device electronics

Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances

Jae-Sung Rieh

This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f T ) of 207 GHz and an f max extrapolated from Mason's unilateral gain of 285 GHz. f max extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12×2.5 μm 2 have these characteristics at a linear current of 1.0 mA/μm (8.3 mA/μm 2 ). Smaller transistors (0.12×0.5 μm 2 ) have an f T of 180 GHz at 800 μA current. The devices have a pinched base sheet resistance of 2.5 k/spl Omega//sq. and an open-base breakdown voltage BV/sub CEO/ of 1.7 V. The improved performance is a result of a new self-aligned device structure that minimizes parasitic resistance and capacitance without affecting f T at small lateral dimensions.

An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source.Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each …

This work reports on SiGe HBTs with f/sub T/ of 350 GHz. This is the highest reported f/sub T/ for any Si-based transistor as well as any bipolar transistor. Associated f/sub max/ is 170 GHz, and BV/sub CEO/ and BV/sub CBO/ are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f/sub T/ and f/sub max/ resulting in 270 GHz and 260 GHz, with BV/sub CEO/ and BV/sub CBO/ of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f/sub T/ and f/sub max/ values are also discussed.

The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si (LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0. 85Ge0. 15/Si epitaxial layers as low as 104 cm 2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.© 1997 American Institute of Physics.

This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (f T ) of 510 GHz at 4.5 K was measured for a 0.12×1.0 μm 2 SiGe HBT (352 GHz at 300 K) at a breakdown voltage BV/sub CEO/ of 1.36 V (1.47 V at 300 K), yielding an f T ×BV/sub CEO/ product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).

A record 210-GHz f T SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/μm 2 is fabricated with a new nonself-aligned (NSA) structure based on 0.18 μm technology. This NSA structure has a low-complexity emitter and extrinsic base process which reduces overall thermal cycle and minimizes transient enhanced diffusion. A low-power performance has been achieved which requires only 1 mA collector current to reach 200-GHz f T . The performance is a result of narrow base width and reduced parasitics in the device. Detailed comparison is made to a 120-GHz self-aligned production device.

This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.

The relatively less exploited terahertz band possesses great potential for a variety of important applications, including communication applications that would benefit from the enormous bandwidth within the terahertz spectrum. This paper overviews an approach toward terahertz applications based on SiGe heterojunction bipolar transistor (HBT) technology, focusing on broad-band communication applications. The design, characteristics, and reliability of SiGe HBTs exhibiting record f/sub T/ of 375 GHz and associated f/sub max/ of 210 GHz are presented. The impact of device optimization on noise characteristics is described for both low-frequency and broad-band noise. Circuit implementations of SiGe technologies are demonstrated with selected circuit blocks for broad-band communication systems, including a 3.9-ps emitter coupled logic ring oscillator, a 100-GHz frequency divider, 40-GHz voltage-controlled …

We present for the first time a very high performance SiGe HBT with f/sub T/ = 200 GHz and f/sub max/ = 280 GHz that has been successfully integrated with IBM's standard 0.13 /spl mu/m foundry-compatible CMOS node into our next generation BiCMOS 8HP technology.

This work reports on SiGe HBT technology with f/sub max/ and f/sub T/ of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of f/sub max/ and f/sub T/ both of which exhibit 300 GHz and above. Associated BV/sub CEO/ and BV/sub CBO/ are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f/sub max/ and f/sub T/ values are also discussed.

This paper presents radio-frequency (RF) characterization and modeling of various wire bond transitions between chips and packages. Test modules composed of Si chips and alumina packages are fabricated in conductor-backed (CB) structures, and they are characterized at frequencies up to 20 GHz. It is shown that the parallel plate resonance of the CB coplanar waveguide (CPW) persists in wire bonding transitions, and narrower-ground CPW-CPW transitions show better characteristics than wider-ground CPW-CPW transitions. The results of three-dimensional full-wave electromagnetic simulation on the test modules reproduce the measured results with a reasonable accuracy. Simple equivalent circuit modeling can reproduce the measured results of the narrower ground CPW transition with no resonance structures. Finally, the effects of bond wire length and impedance mismatch on RF performance are …

Scaling has been the principal driving force behind the successful technology innovations of the past half-century. This paper investigates the impacts of scaling on SiGe heterojunction bipolar transistors (HBTs), which have recently emerged as a strong contender for RF and mixed-signal applications. The impacts of scaling on key performance metrics such as speed and noise are explored, and both theory and data show that scaling, both vertical and lateral, has mostly beneficial effects on these metrics. However, it is shown that the scaled devices are increasingly vulnerable to device reliability issues due to increased electric field and operation current density. Bipolar transistor scaling rules are reviewed and compared with accumulated reported data for verification. A review of scaling limits suggests that bipolar scaling has not reached the physical fundamental limit yet, promising a continued improvement of …

Thermal resistance has been measured for high speed SiGe HBTs with various emitter widths and lengths. The smaller devices exhibited higher thermal resistance values, but eventually resulted in lower junction temperature rise for a given power density. A physical model has been developed which showed good agreement with the measurements. The model indicates that the thermal resistance depends strongly on the deep trench geometry. The thermal resistance is also anticipated to increase with the existence of adjacent devices due to a heat dissipation interference, according to the model.

A 300 GHz integrated heterodyne receiver and transmitter for wideband communication and imaging applications have been developed in a 250 nm InP double-heterojunction bipolar transistor (DHBT) process. The receiver integrates a 300 GHz RF amplifier with a balun, a down-conversion mixer with an IF amplifier, and a local oscillator, all on a single chip. The transmitter is composed of the identical circuit blocks of RF amplifier and oscillator in addition to an up-conversion mixer. Compared to previous integrated receivers and transmitters reported at above 200 GHz, the proposed work includes the on-chip local oscillator and mixers operating at a fundamental mode. This simplifies the system architecture, thus not only reducing the chip area and DC consumption but also improving the RF performance such as high conversion gain, low spurious levels, and low noise figure. The receiver exhibits a peak …

Product designs for 40-Gb/s applications fabricated from SiGe BiCMOS technologies are now becoming available. In this paper we first briefly discuss heterojunction bipolar transistor (HBT) device operation at high speed, demonstrating that perceived concerns regarding lower BV/sub CEO/ and higher current densities required to operate silicon HBTs at such high speeds do not in actuality limit design or performance. The high-speed portions of the 40-Gb/s system are then addressed individually. We demonstrate the digital capability through a 4: 1 multiplexer and a 1 : 4 demultiplexer running over 50 Gb/s error free at a -3.3-V power supply. We also demonstrate a range of analog elements, including a lumped limiting amplifier which operates with a 35-GHz bandwidth, a transimpedance amplifier with 220-/spl Omega/ gain and 49.1-GHz bandwidth, a 21.5-GHz voltage-controlled oscillator with over -100-dBc/Hz …

The goal of achieving terahertz (THz) transistors within the silicon material system has generated significant recent interest. In this paper, we use operating temperature as an effective way of gaining a better understanding of the performance limits of SiGe HBTs and their ultimate capabilities for achieving THz speeds. Different approaches for vertical profile scaling and reduction of parasitics are addressed, and three prototype fourth-generation SiGe HBTs are compared and evaluated down to deep cryogenic temperatures, using both dc and ac measurements. A record peak f T /f max of 463/618 GHz was achieved at 4.5 K using 130-nm lithography (309/343 GHz at 300 K), demonstrating the feasibility of reaching half-THz f T and f max simultaneously in a silicon-based transistor. The BV CEO of this cooled SiGe HBT was 1.6 V at 4.5 K (BV CBO = 5.6 V), yielding a record f T times BV CEO product of 750 GHzldrV (510 …

This work presents a Si-based approach to develop high-speed devices for broadband communication applications. SiGe HBTs with f/sub T/ and f/sub max/ of 375 GHz and 210 GHz, respectively, are reported. The achieved f/sub T/ of 375 GHz is the highest reported value for any Si-based transistor and also for any bipolar transistor. Associated BV/sub CEO/ and BV/sub CBO/ are 1.4 V and 5.0 V, respectively. The device structure and process steps are described highlighting the differences from III-V technologies, and the impact of layout configuration and device dimension on the device performance is discussed.

SiGe HBT transistors achieving over 200 GHz f/sub T/ and f/sub MAX/ are demonstrated in this paper. Techniques and trends in SiGe HBT design are discussed. Processing techniques available to silicon technologies are utilized to minimize parasitic resistances and capacitances and thereby establish raw speeds exceeding III-V devices despite the higher mobility in those materials. Higher current densities and greater avalanche currents, which are required for establishing such high performance, are discussed as they relate to device self-heating and reliability and the degradation of the devices. Simple circuit results are shown, demonstrating 4.2-ps ring-oscillator delays.

SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety of elements including raised S/D, poly-SiGe Gates, in buffer layers to create a tensile strained Si layer, and as the conducting channel in MODFETs.

The current level in the modern high-speed SiGe heterojunction bipolar transistors (HBTs) continues to increase for operation speed enhancement, but the resultant self-heating and elevated junction temperature emerge as a growing concern for device reliability as well as performance. To address such thermal issues, the optimization of SiGe HBT structures to achieve simultaneous improvements in thermal and electrical performance is carried out in this study. As a foundation for the study, an R/sub th/ measurement method and a geometry-based fast analytic thermal model were first developed for trench-isolated SiGe HBTs. Based on the method and model, a set of device design points for lowered R/sub th/ without compromising the RF performance have been successfully proposed and experimentally verified on IBM's 200-GHz SiGe HBTs. The details of the proposed structures and acquired results will be …

High Speed Integrated Systems Lab

교수님 소개

이재성

연구실 소개

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

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저널 & 학회 논문 출판 수

연구실 논문 목록

A 140-GHz FMCW Radar Transceiver With Dual-Lens Packaging for Improved Beam Alignment in 65-nm CMOS Technology

A 140-GHz FMCW Radar Transceiver With Dual-Lens Packaging for Improved Beam Alignment in 65-nm CMOS Technology

A CMOS 270-GHz Steerable Oscillator Array with Bias-Tuned Phase Control

연구실 보유 특허

대학별 입시끈

우리 연구실 모집

교수님 소개

이재성

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

A 140-GHz FMCW Radar Transceiver With Dual-Lens Packaging for Improved Beam Alignment in 65-nm CMOS Technology

A 140-GHz FMCW Radar Transceiver With Dual-Lens Packaging for Improved Beam Alignment in 65-nm CMOS Technology

A CMOS 270-GHz Steerable Oscillator Array with Bias-Tuned Phase Control

연구실 보유 특허

최근 3년간 연구실적 높은 연구실

대학별 입시끈

우리 연구실 모집