Nano Convergence Materials Laboratory. Our research focuses on the fundamental properties of nano-scale materials and technological applications of converged nanomaterials. The main studies include investigation of fundamental properties of low-dimensional materials, such as graphene, transition metal dichalcogenides, and 2D oxides, and their large-area growth for practical applications. By combining these materials, new material systems of van der Waals heterostructures are artificially fabricated and studied for advanced electronics and energy applications.

나노 융합 재료 연구실. 우리 연구는 나노 스케일 재료의 기본 특성과 융합 나노 재료의 기술적 응용에 중점을 둡니다. 주요 연구에는 그래핀, 전이 금속 디칼코게나이드 및 2D 산화물과 같은 저 차원 재료의 기본 특성 조사와 실제 응용을위한 대 면적 성장이 포함됩니다. 이러한 재료를 결합하여 반 데르 발스 헤테로 구조의 새로운 재료 시스템이 인공적으로 제작되어 고급 전자 및 에너지 응용 분야에 대해 연구됩니다.

Focus on Institute of Applied Physics at Seoul National University

Highly flexible graphene-polydimethylsiloxane strain sensors with proximity-sensing capability

Advances and challenges in 2D semiconductor devices for monolithic 3D integration

Van der Waals epitaxy and beyond for monolithic 3D integration

In-plane anisotropic two-dimensional materials for twistronics

Irreversible conductive filament contacts for passivated van der Waals heterostructure devices

Hypotaxy‐Enabled Selective Growth of MoS2 for Laterally‐Connected Edge and van der Waals Bottom Contacts

Atomic scale study of black phosphorus degradation

Flexible and transparent gold network electrodes on fluorinated graphene

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

Highly flexible graphene nanoplatelet-polydimethylsiloxane strain sensors with proximity-sensing capability

No tilt angle dependence of grain boundary on mechanical strength of chemically deposited graphene film

Advancements in Chemical Vapor Deposited Carbon Films for Secondary Battery Applications

Exciton-dominant photoluminescence of MoS 2 by a functionalized substrate

Modulation of electrical properties in MoTe 2 by XeF 2-mediated surface oxidation

Commensurate, Incommensurate, and Reconstructed Structures of Multilayer Transition Metal Dichalcogenide and Their Applications

Advances in Gate Dielectrics for 2D Electronics

Modulation of optical and electrical properties in hexagonal boron nitride by defects induced via oxygen plasma treatment

Stimuli-Responsive Materials for the Applications in Soft Robotic Sensors and Actuators

Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices Yongjun Shin, Junyoung Kwon, Yeonsu Jeong, Kenji Watanabe …

2D semiconducting materials for electronic and optoelectronic applications: potential and challenge

Moiré-driven band renormalization and quantum transport in twisted 2D materials

Electrical stabilization and room-temperature light emission of trions in van der Waals heterostructure

Recent trends in covalent functionalization of 2D materials

Optical grade transformation of monolayer transition metal dichalcogenides via encapsulation annealing

Laser-induced Phase Transition and Patterning of hBN-encapsulated MoTe2 Huije Ryu, Yunah Lee, Jae Hwan Jeong, Yangjin Lee, Yeryun Cheon, Kenji …

Corrigendum: Advances and challenges in 2D semiconductor devices for monolithic 3D integration (2025 2D Mater. 12 043003)

Tightly bound trions in monolayer MoS2

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

Atomically thin pn junctions with van der Waals heterointerfaces

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

Effect of defects on the intrinsic strength and stiffness of graphene

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage

Measurement of Lateral and Interfacial Thermal Conductivity of Single-and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique

Graphene mechanical oscillators with tunable frequency

Graphene based heterostructures

Mechanical properties of two-dimensional materials and their applications

Effect of surface morphology on friction of graphene on various substrates

Artificial Neuron and Synapse Devices Based on 2D Materials

Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS 2 Heterostructure Devices

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

Gwan group

교수님 소개

이관형

연구실 소개

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Hypotaxy‐Enabled Selective Growth of MoS2 for Laterally‐Connected Edge and van der Waals Bottom Contacts

Corrigendum: Advances and challenges in 2D semiconductor devices for monolithic 3D integration (2025 2D Mater. 12 043003)

Focus on Institute of Applied Physics at Seoul National University

연구실 보유 특허

대학별 입시끈

우리 연구실 모집

교수님 소개

이관형

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Hypotaxy‐Enabled Selective Growth of MoS2 for Laterally‐Connected Edge and van der Waals Bottom Contacts

Corrigendum: Advances and challenges in 2D semiconductor devices for monolithic 3D integration (2025 2D Mater. 12 043003)

Focus on Institute of Applied Physics at Seoul National University

연구실 보유 특허

최근 3년간 연구실적 높은 연구실

대학별 입시끈

우리 연구실 모집