이승빈

박소은

심문석

Dr. Jung Yongduck

The Two-Dimensional Material-based Device Laboratory focuses on the design and investigation of innovative devices using two-dimensional materials. Research areas include electronic and optoelectronic devices. The laboratory studies polarity-controllable devices for reconfigurable circuits and synapse/neuron-mimicking devices for neuromorphic hardware implementation. It also focuses on developing high-performance photodetectors and their applications.

본 연구실에서는 2차원 물질 기반 혁신적인 소자 설계 및 연구를 진행하며, 전자 및 광전자 소자를 주요 연구 분야로 한다. 재구성 가능 회로를 위한 극성 제어 소자와 뉴로모픽 하드웨어 구현을 위한 시냅스/뉴런 모방 소자를 연구하고, 고성능 광 검출기 개발 및 응용에 중점을 둔다.

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post-Synaptic Current for Highly Accurate Spiking Neural Networks

Revisiting Ferroelectric-Gated Phototransistors: A Tripartite Synapse-Inspired Approach to In-Sensor Image Processing

Tactile neuromorphic system: convergence of triboelectric polymer sensor and ferroelectric polymer synapse

Pseudo-magnetic field-induced slow carrier dynamics in periodically strained graphene

An ultrahigh-performance photodetector based on a perovskite-transition-metal-dichalcogenide hybrid structure

A High‐Performance WSe2/h‐BN Photodetector using a Triphenylphosphine (PPh3)‐Based n‐Doping Technique

High‐performance transition metal dichalcogenide photodetectors enhanced by self‐assembled monolayer doping

Controllable Nondegenerate p-Type Doping of Tungsten Diselenide by Octadecyltrichlorosilane

Timing-Dependent Spiking Neural Network: Fully On-Board Hardware Implementation with Photoelectroactive Van der Waals Synapses

Spectrally Tunable 2D Material-Based Infrared Photodetectors for Intelligent Optoelectronics

Polarity Engineering in a Single MoTe2 Device for Homogeneous Complementary Circuit Applications

Enabling the Angstrom Era: 2D Material-Based Multi-Bridge-Channel Complementary Field Effect Transistors

Mini Review: 2D Materials in Logic Technology: Power Efficiency and Scalability in 2DM-MBC CFET

Configurable anti-ambipolar photoresponses for optoelectronic multi-valued logic gates

T actile neuromorphic system: convergence of triboelectric polymer sensor and ferroelectric polymer synapse

Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain

Triaxially strained suspended graphene for large-area pseudo-magnetic fields

1D photonic crystal direct bandgap GeSn-on-insulator laser

Heterostrain-enabled dynamically tunable moiré superlattice in twisted bilayer graphene

Biaxially strained germanium crossbeam with a high-quality optical cavity for on-chip laser applications

Controllable potential barrier for multiple negative-differential-transconductance and its application to multi-valued logic computing

Effect of large work function modulation of MoS 2 by controllable chlorine doping using a remote plasma

Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction

A Neuromorphic Device Implemented on a Salmon‐DNA Electrolyte and its Application to Artificial Neural Networks

Rhenium Diselenide (ReSe2) Near‐Infrared Photodetector: Performance Enhancement by Selective p‐Doping Technique

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits

Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices

Highly Sensitive and Reusable Membraneless Field-Effect Transistor (FET)-Type Tungsten Diselenide (WSe2) Biosensors

Stable and Reversible Triphenylphosphine-Based n-Type Doping Technique for Molybdenum Disulfide (MoS2)

Self-assembled layer (SAL)-based doping on black phosphorus (BP) transistor and photodetector

Rhenium diselenide (ReSe2) infrared photodetector enhanced by (3-aminopropyl) trimethoxysilane (APTMS) treatment

Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage

Layer-controlled thinning of black phosphorus by an Ar ion beam

Electronic and optoelectronic devices based on two‐dimensional materials: from fabrication to application

Efficient Threshold Voltage Adjustment Technique by Dielectric Capping Effect on MoS2 Field-Effect Transistor

Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS2) by zinc oxide (ZnO)

Ultra-low doping on two-dimensional transition metal dichalcogenides using DNA nanostructure doped by a combination of lanthanide and metal ions

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

M-DNA/transition metal dichalcogenide hybrid structure-based bio-FET sensor with ultra-high sensitivity

Improvement of the short channel effect in PMOSFETs using cold implantation

Suppression of boron diffusion using carbon co-implantation in DRAM

High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

Broad detection range rhenium diselenide photodetector enhanced by (3‐aminopropyl) triethoxysilane and triphenylphosphine treatment

Graphene Nanopillar Structures for Giant Pseudo-Magnetic Fields

Heterostrain-Enabled Dynamically Tunable Moiré Superlattice in Twisted Bilayer Graphene On Flexible Substrates

Triaxially Strained Graphene Structure for Large-area Pseudo-Magnetic Field

SEMICONDUCTOR DEVICE WITH NEGATIVE DIFFERENTIAL TRANSCONDUCTANCE AND METHOD OF MANUFACTURING THE SAME

양극성 광 시냅스 소자 및 이의 제조방법

인공 시냅스 소자 및 이의 제조방법

부성 미분 전달 컨덕턴스 소자 제조 방법

An ultrahigh‐performance photodetector based on a perovskite–transition‐metal‐dichalcogenide hybrid structure

High‐Performance 2D Rhenium Disulfide (ReS 2 ) Transistors and Photodetectors by Oxygen Plasma Treatment

A High‐Performance WSe 2 / h ‐BN Photodetector using a Triphenylphosphine (PPh 3 )‐Based n‐Doping Technique

Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism.

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design.

Ultrasensitive MoS 2 photodetector by serial nano-bridge multi-heterojunction

n-and p-type doping phenomenon by artificial DNA and M-DNA on two-dimensional transition metal dichalcogenides

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl) Triethoxysilane and Triphenylphosphine Treatment.

Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS 2 ) through Thermal and Optical Activation

Highly Sensitive and Reusable Membraneless Field-Effect Transistor (FET)-Type Tungsten Diselenide (WSe 2 ) Biosensors

Rhenium Diselenide (ReSe 2 ) Near‐Infrared Photodetector: Performance Enhancement by Selective p‐Doping Technique

A neuromorphic device implemented on a salmon‐DNA electrolyte and its application to artificial neural networks

Nano Electronics & Optoelectronics Lab @ GIST

교수님 소개

강동호

연구실 소개

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post-Synaptic Current for Highly Accurate Spiking Neural Networks

Revisiting Ferroelectric-Gated Phototransistors: A Tripartite Synapse-Inspired Approach to In-Sensor Image Processing

Timing-Dependent Spiking Neural Network: Fully On-Board Hardware Implementation with Photoelectroactive Van der Waals Synapses

연구실 보유 특허

대학별 입시끈

우리 연구실 모집

교수님 소개

강동호

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post-Synaptic Current for Highly Accurate Spiking Neural Networks

Revisiting Ferroelectric-Gated Phototransistors: A Tripartite Synapse-Inspired Approach to In-Sensor Image Processing

Timing-Dependent Spiking Neural Network: Fully On-Board Hardware Implementation with Photoelectroactive Van der Waals Synapses

연구실 보유 특허

최근 3년간 연구실적 높은 연구실

대학별 입시끈

우리 연구실 모집