Young Geun Song

Ju Young Kwon

Ji Eun Kim

Jae Uk Kown

Soyoung Shin

Byeong Chan Kim

Minho Lee

Jong Sung Kim

Eonu Ha

Chang Min Kim

Nalin Park

Goeun Heo

Hyeong Uk Kim

Chanho Kim

Seyoung Choi

The EMDSlab (EMERGING MATERIALS, DEVICES & SYSTEM LAB) is a next-generation semiconductor research laboratory affiliated with Sungkyunkwan University. The lab focuses on developing novel materials, devices, and systems for advanced semiconductor technologies, including resistive switching (memristor) materials, neuromorphic computing, and neural network systems. They are actively involved in strategic industry-academia programs with Samsung Electronics and Samsung Electro-Mechanics, as well as national and corporate-funded research projects like the Next-Generation Intelligent Semiconductor Technology Development Program and Hyundai Motor Group Future Technology Research Program. The lab also recruits graduate students, postdoctoral researchers, and undergraduate interns.

EMDSlab (EMERGING MATERIALS, DEVICES & SYSTEM LAB)은 성균관대학교 소속 차세대 반도체 연구실입니다. 이 연구실은 저항 변화(멤리스터) 재료, 뉴로모픽 컴퓨팅, 신경망 시스템을 포함한 첨단 반도체 기술을 위한 새로운 재료, 장치 및 시스템 개발에 중점을 둡니다. 삼성전자 및 삼성전기와 전략적 산학 협력 프로그램, 차세대 지능형 반도체 기술 개발 프로그램 및 현대자동차그룹 미래 기술 연구 프로그램과 같은 국가 및 기업 지원 연구 프로젝트에 적극적으로 참여하고 있습니다. 또한, 대학원생, 박사후 연구원 및 학부 인턴을 모집합니다.

Article by Minsu Nam featured on cover

Paper by Suk Yeop Chun accepted

Paper by Keunho Soh accepted

Paper by Su in Hwang accepted

Paper by Ji Eun Kim accepted

Paper by Ji Eun Kim and Keunho Soh accepted

Paper by Keunho Soh published

Paper by Ju Young Kwon and Ji Eun Kim published

Paper by Ju Young Kwon accepted

Paper by Suk Yeop Chun and Dr Song accepted

Paper by Dr Song accepted

Paper by Jae Uk Kwon accepted

Paper by Dr. Song accepted

Oxide Nanostructures for Artificial Olfaction

In Situ Transmission Electron Microscopy Visualization of Electric-Field-Induced Phase Transitions at the Morphotropic Phase Boundary in Hf0.5Zr0.5O2

Hydrogen-assisted Asymmetric and Nonlinear Memristor Array for Reconfigurable Olfactory Graph Networks

Mechanism and Evaluation of Two-terminal Ferroelectric-based Memristive/Memcapacitive Devices

Memtransistor for Bio-Inspired Neuromorphic Computing: A Perspective from Device Physics to Neural and Sensory Systems

Ferroelectric Devices as Physical Reservoirs: Enabling Nonlinear Dynamics and Memory in Neuromorphic Systems

Unraveling Origin of Stochasticity in Multi-Filamentary Memristor

A Unipolar-Driven Synaptic Transistor for Environment-Adaptable Vision System

Multi-timescale Temporal Processing for Ion-motion Memristor-based Physical Reservoir Computing

Cluster-type conductive path-based selector-less 1R memristor array for spiking neural networks

Memristive Neuromorphic Interfaces: Integrating Sensory Modalities with Artificial Neural Networks

Calibration of P-bit for Aligned Stochastic Outputs in Probabilistic Computing

Multielement Filament Memristor Enabling Multifunctional Neuromorphic Device

Flexible Synaptic Memristors with Controlled Rigidity in Zirconium-Oxo Clusters for High-Precision Neuromorphic Computing

Fluorite-Structured HfO2/ZrO2/HfO2 Superlattice Based Self-Rectifying Ferroelectric Tunnel Junction Synapse

Leveraging Volatile Memristors in Neuromorphic Computing: From Materials to System Implementation

Artificial Sensory System based on Memristive Devices

Role of Oxygen Vacancies in Ferroelectric or Resistive Switching Hafnium Oxide

Epitaxial PZT Film-based Ferroelectric Field-Effect Transistors for Artificial Synapse

Heterosynaptic plasticity in a vertical two-terminal synaptic device

Artificial Olfactory System Based on a Chemi-memristive Device

Highly Reliable Threshold Switching Characteristics of Surface-Modulated Diffusive Memristor Immune to the Atmosphere Changes

Surface-Dominated HfO2 Nanorods-based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High Precision Neuromorphic Computing

Low energy and analog memristor enabled by regulation of Ru ion motion for high precision neuromorphic computing

Artificial adaptive and maladaptive sensory receptors based on a surface-dominated diffusive memristor

Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory

Area‐Type Electronic Bipolar Resistive Switching of Pt/Al2O3/Si3N3.0/Ti with Forming‐Free, Self‐Rectification, and Nonlinear Characteristics

A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array Operation

A Low‐Current and Analog Memristor with Ru as Mobile Species

Bipolar resistive switching property of Si3N4-x thin films depending on N deficiency

Fabrication of a Cu-cone-shaped cation source inserted conductive bridge random access memory and its improved switching reliability

Novel Selector‐Induced Current‐Limiting Effect through Asymmetry Control for High‐Density One‐Selector–One‐Resistor Crossbar Arrays

Capacitive neural network with neuro-transistors

An artificial nociceptor based on a diffusive memristor

Fully memristive neural networks for pattern classification with unsupervised learning

Purely electronic nanometallic resistance switching random-access memory

A True Random Number Generator Using Threshold‐Switching‐Based Memristors in an Efficient Circuit Design

Nociceptive Memristor

Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths

Current Limit and Self-Rectification Functionalities in the TiO2/HfO2 Resistive Switching Material System

Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

An efficient analog Hamming distance comparator realized with a unipolar memristor array: a showcase of physical computing

Comparison of the atomic layer deposition of tantalum oxide thin films using Ta (NtBu)(NEt2)3 and Ta (NtBu)(NEt2)2Cp and H2O

Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

Impedance spectroscopic analysis on eﬀects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin ﬁlms on their bipolar resistive switching

Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides

Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots

32x32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memomry

Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt

Substrate Dependent Growth Behaviors of Plasma-Enhanced Atomic Layer Deposited Nickel Oxide Films for Resistive Switching Application

Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO3 thin films grown by sputtering

Optimization of Chemical Structure of Schottky-Type Selection Diode for Crossbar Resistive Memory

EMERGING MATERIALS, DEVICES & SYSTEM (EMDS) LAB (차세대 반도체 연구실)

교수님 소개

윤정호

연구실 소개

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Article by Minsu Nam featured on cover

Paper by Suk Yeop Chun accepted

Paper by Keunho Soh accepted

연구실 보유 특허

대학별 입시끈

우리 연구실 모집

교수님 소개

윤정호

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Article by Minsu Nam featured on cover

Paper by Suk Yeop Chun accepted

Paper by Keunho Soh accepted

연구실 보유 특허

최근 3년간 연구실적 높은 연구실

대학별 입시끈

우리 연구실 모집