DRL members have focused on various memory devices, Nano-scale CMOS technology, 3D structure devices
본 연구실은 다양한 반도체 소자의 모델링 및 분석에 대한 연구를 하고 있습니다.
주 연구 분야로는 3-D NAND Flash Memory가 있습니다.
또한, Machine Learning을 사용하여 소자의 특성을 예측하고 있습니다.

본 연구실은 다양한 반도체 소자의 모델링 및 분석에 대한 연구를 하고 있습니다.
주 연구 분야로는 3-D NAND Flash Memory가 있습니다.
또한, Machine Learning을 사용하여 소자의 특성을 예측하고 있습니다.

Machine learning-based prediction of the impact of random grain boundary Z-interference on Vt distribution in 3-D NAND flash memory

A semi-analytical physics-based transient model for program (PGM) operation of charge-trap-based 3-D NAND flash memories

Quantitative analysis on z-interference using reprogram scheme in 3D NAND flash memory Vth distribution

Modeling Attempt-to-Escape Frequency: Tunneling Emission of Trapped Electrons in Tunneling Oxides of 3-D NAND Flash Memory

A Compact Model for Program Operation of Gate-All-Around Barrier-Engineered Charge-Trapping NAND Flash Memory in the FN-Tunneling Regime

An advanced scheme to match electric field between program verify and read operation in 3D NAND flash memory

Three-dimensional NAND flash architecture design based on single-crystalline stacked array

Single-crystalline Si stacked array (STAR) NAND flash memory

A simple and analytical parameter-extraction method of a microwave MOSFET

A simple wide-band on-chip inductor model for silicon-based RF ICs

Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor

Thin oxide charging current during plasma etching of aluminum

Thin gate oxide damage due to plasma processing

Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic

Analytical drain thermal noise current model valid for deep submicron MOSFETs

Demonstration of highly manufacturable STT-MRAM embedded in 28nm logic

Flash memory element and manufacturing method thereof

Does exchange rate variability matter for welfare? A quantitative investigation of stabilization policies

A 55dB SNR with 240Hz frame scan rate mutual capacitor 30× 24 touch-screen panel read-out IC using code-division multiple sensing technique

Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2-GHz low noise amplifier

Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs

Characteristics of p-channel Si nano-crystal memory

Thin oxide damage by plasma etching and ashing processes

Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at …

Device Research Laboratory

교수님 소개

신형철

연구실 소개

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Machine learning-based prediction of the impact of random grain boundary Z-interference on Vt distribution in 3-D NAND flash memory

A semi-analytical physics-based transient model for program (PGM) operation of charge-trap-based 3-D NAND flash memories

Quantitative analysis on z-interference using reprogram scheme in 3D NAND flash memory Vth distribution

연구실 보유 특허

대학별 입시끈

우리 연구실 모집

교수님 소개

신형철

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Machine learning-based prediction of the impact of random grain boundary Z-interference on Vt distribution in 3-D NAND flash memory

A semi-analytical physics-based transient model for program (PGM) operation of charge-trap-based 3-D NAND flash memories

Quantitative analysis on z-interference using reprogram scheme in 3D NAND flash memory Vth distribution

연구실 보유 특허

최근 3년간 연구실적 높은 연구실

대학별 입시끈

우리 연구실 모집