The Emerging Semiconductor Technology Laboratory (ESTL) focuses on developing next-generation semiconductor materials/devices and computing systems. We explore novel materials, device architectures, switching mechanisms, and system-level designs to enable new computing paradigms.
We are looking for highly motivated postdocs, graduate students, and undergraduate students with various backgrounds (materials science, electrical engineering, chemical engineering, physics, chemistry, etc.) to join our team.

차세대 반도체 재료 및 소자, 차세대 컴퓨팅 시스템(뉴로모픽 컴퓨팅, 인메모리 컴퓨팅, 확률 컴퓨팅 등)

Localized Conduction Channels in Memristors

Role of heat in post-silicon electronics

Tunable stochastic memristors for energy-efficient encryption and computing

True random number generation using the spin crossover in LaCoO 3

Memristors with Tunable Volatility for Reconfigurable Neuromorphic Computing

Probabilistic computing using Cu 0.1 Te 0.9 /HfO 2 /Pt diffusive memristors

Time-varying data processing with nonvolatile memristor-based temporal kernel

A High‐Speed True Random Number Generator Based on a Cu x Te 1− x Diffusive Memristor

A true random number generator using threshold‐switching‐based memristors in an efficient circuit design

A combination of a volatile‐memristor‐based true random‐number generator and a nonlinear‐feedback shift register for high‐speed encryption

Memristors with tunable volatility for reconfigurable neuromorphic computing

Spatiotemporal data processing with memristor crossbar‐array‐based graph reservoir

Heterogeneous reservoir computing in second-order Ta 2 O 5/HfO 2 memristors

Fully CMOS‐based p‐bits with a bistable resistor for probabilistic computing

Graph analysis with multifunctional self‐rectifying memristive crossbar array

Atomic layer deposition of GeSe films using HGeCl 3 and [(CH 3 ) 3 Si] 2 Se with the discrete feeding method for the ovonic threshold switch

Electroforming-free bipolar resistive switching in GeSe thin films with a Ti-containing electrode

Localized conduction channels in memristors

An analysis of components and enhancement strategies for advancing memristive neural networks

Area‐Type Electronic Bipolar Resistive Switching of Pt/Al 2 O 3 /Si 3 N 3.0 /Ti with Forming‐Free, Self‐Rectification, and Nonlinear Characteristics

2Memristor‐1Capacitor Integrated Temporal Kernel for High‐Dimensional Data Mapping

Implementation of Bayesian networks and Bayesian inference using a Cu 0.1 Te 0.9/HfO 2/Pt threshold switching memristor

Bipolar resistive switching property of Si 3 N 4− x thin films depending on N deficiency

Emerging Semiconductor Technology Lab

교수님 소개

우경석

연구실 소개

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Localized Conduction Channels in Memristors

Role of heat in post-silicon electronics

Tunable stochastic memristors for energy-efficient encryption and computing

연구실 보유 특허

대학별 입시끈

우리 연구실 모집

교수님 소개

우경석

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Localized Conduction Channels in Memristors

Role of heat in post-silicon electronics

Tunable stochastic memristors for energy-efficient encryption and computing

연구실 보유 특허

최근 3년간 연구실적 높은 연구실

대학별 입시끈

우리 연구실 모집