UNL is a multidisciplinary research team composed of experts in electrical engineering, semiconductor physics, linear and electronic circuits, microwave engineering, materials science, and chemical engineering. We are developing cutting-edge electronic technologies that will shape the future, including logic transistors, memory components, RF metasurfaces, and advanced packaging. UNL 연구의 지향점은 ' 이종집적 (Heterogeneous Integration) ' 기술개발에 있습니다. 두 가지 이종집적 기술, ' 단일3차원집적 (Monolithic 3D Integration, M3D) '과 ' 첨단패키징 '을 통한 미래반도체시스템의 성능 향상에 대해 연구합니다.

UNL은 전자기학, 반도체물리, 선형 및 전자 회로, 초고주파공학, 재료 과학, 화학공학을 기반으로 구성된 다학제 연구 팀입니다. 우리는 미래를 변화시킬 첨단 전자 기술들 ( 로직 트랜지스터, 메모리 소자, RF 메타표면, 첨단패키징) 을 개발하고 있습니다. UNL 연구의 지향점은 ' 이종집적 (Heterogeneous Integration) ' 기술개발에 있습니다. 두 가지 이종집적 기술, ' 단일3차원집적 (Monolithic 3D Integration, M3D) '과 ' 첨단패키징 '을 통한 미래반도체시스템의 성능 향상에 대해 연구합니다.

Monolithic 3D-integrated all-solid ion-gated carbon nanotube transistors with tunable ionic conductance for multi-timescale reservoir computing

Statistically resolving thickness-dependent electrical characteristics in multilayer MoS
₂
transistors

Oxygen-tunnel-engineered indium tin oxide vertical channel transistors enabling high-performance embedded memory for monolithic 3D integration

Wafer-scale non-ferroelectric κ-phase 2D In
₂
Se₃ transistors

Advances and future challenges in monolithic 3D integrated logic, power, and optoelectronics technologies for tightly interconnected intelligent systems

Indium tin oxide vertical channel transistors for scaled 4F 2 2T0C gain cell memory with etched sidewall cleaning

Addressing transconductance-bandwidth trade-off by three-dimensional electrolyte-surrounded organic electrochemical transistors

Back-end-of-line-compatible passivation of sulfur vacancies in MoS ₂ transistors using electron-withdrawing benzenethiol

3D active-matrix multimodal sensors arrays for independent detection of pressure and temperature

Design and integration of organic printed thin-film transistor-based soft biosensors for wearable applications

Ambient printing of native oxides for ultrathin transparent flexible circuit boards

Dual-gate carbon nanotube thin-film transistors with printed channel and passivation interlayer on plastic foil

Stabilizing Schottky junction in conjugated polymer diodes enables long-term reliable radio-frequency energy harvesting on plastic

High mobility amorphous polymer‐based 3D stacked pseudo logic circuits through precision printing

High energy density in artificial heterostructures through relaxation time modulation

Flexible field-effect transistors with high-quality and uniform single-layer graphene for high mobility

Effect of back-gate dielectric on indium tin oxide (ITO) transistor performance and stability

Latent and controllable doping of stimuli-activated molecular dopants for flexible and printable organic thermoelectric generators

Effect of top-gate dielectric deposition on the performance of indium tin oxide transistors

Dual-gate thin film transistor lactate sensors operating in the subthreshold regime

Large transconductance of electrochemical transistors based on fluorinated donor–acceptor conjugated polymers

3D integration of flexible and printed electronics: integrated circuits, memories, and sensors

High performance carbon nanotubes thin film transistors by selective ferric chloride doping

Spatiotemporal measurement of arterial pulse waves enabled by wearable active-matrix pressure sensor arrays

Layout-to-bitmap conversion and design rules for inkjet-printed large-scale integrated circuits

Dual-pulse photoactivated atomic force microscopy

Flexible and printed organic nonvolatile memory transistor with bilayer polymer dielectrics

Programmable a-InGaZnO gate array with laser-induced forward transfer

Stand‐alone intrinsically stretchable electronic device platform powered by stretchable rechargeable battery

Artificial multimodal receptors based on ion relaxation dynamics

A flexible 3D organic preamplifier for a lactate sensor

Phase‐separated, printed organic thin‐film transistor‐based nonvolatile memory with enhanced data retention

Reliable inkjet contact metallization on printed polymer semiconductors for fabricating staggered TFTs

Flexible pressure-sensitive contact transistors operating in subthreshold regime

Compact modelling and SPICE simulation for three-dimensional, inkjet-printed organic transistors, inverters and ring oscillators

Static and dynamic response comparison of printed, single- and dual-gate 3-D complementary organic TFT inverters

Bistaggered contact geometry for symmetric dual-gate organic TFTs

Parylene copolymer gate dielectrics for organic field-effect transistors

Three-dimensional monolithic integration in flexible printed organic transistors

Fabrication of ultrathin low-voltage-driven printed organic circuits with anodized gate islands

Parylene-based double-layer gate dielectrics for organic field-effect transistors

Pressure/temperature sensing bimodal electronic skin with stimulus discriminability and linear sensitivity

Control of concentration of non-hydrogen-bonded hydroxyl groups in polymer dielectrics for organic field-effect transistors with operational stability

Printed 5-V organic operational amplifiers for various signal processing

Freeform micropatterning of living cells into cell culture medium using direct inkjet printing

Low-temperature, solution-processed, 3-D complementary organic FETs on flexible substrate

Three-dimensional, inkjet-printed organic transistors and integrated circuits with 100% yield, high uniformity, and long-term stability

Vertically stacked complementary organic field‐effect transistors and logic circuits fabricated by inkjet printing

Double-shot inkjet printing for high-conductivity polymer electrode

Solution‐processed vertically stacked complementary organic circuits with inkjet‐printed routing

Microchannel-Embedded 3D-Printed Ceramic Substrates for Liquid-Cooled Power Module Packaging

3D-Printed Coaxial-Fed Patch Antenna-Embedded Substrates for 5G Antenna-In-Package Applications

Active BSCDN benchmark framework with backside-compatible CNFET logic technology

Monolithic 3D integration of III-V HEMTs on glass using ultra-thin dielectric bonding layer: A high-frequency and low-loss active glass platform for sub-THz applications

Thermal evaluation and comparison of CAA and GAA indium tin oxide vertical channel transistors

Quasi-coaxial through-hole integrated additively manufactured antenna-in-package lid substrates

3D printed fanout interposer substrates with curved through-holes for rapid prototyping of advanced packaging

Future of memory: massive, diverse, tightly integrated with compute – from device to software

Micro-3D-printed packaging substrates with embedded through holes for organic inteposers

Bias stress stability of ITO tra nsistors and its dependence on dielectric properties

First demonstration of top-gated ITO transistors: effect of channel passivation

8-layer 3D vertical Ru/AlO x N y /TiN RRAM with mega-Ω level LRS for low power and ultrahigh-density memory

The future of hardware technologies for computing: N3XT 3D MOSAIC, illusion scaleup, co-design

Printed 2-V dual-gate CNFETs with an enhanced depletion behavior

A phase-separated polymer blocking layer for enhancing data retention in flexible printed nonvolatile organic memories

Flexible printed top-contact organic thin-film transistors

Technology development for direct-printed dual-gate organic TFT circuit fabrication with 3-D integration

Stand-alone intrinsically stretchable electronic device platform powered by stretchable rechargeable battery

Solution-processed vertically stacked complementary organic circuits with inkjet-printed routing

3D active-matrix multimodal sensor arrays for independent detection of pressure and temperature

UNIST Nanoelectronics and Advanced Packaging Lab (UNL)

교수님 소개

권지민

연구실 소개

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Advances and future challenges in monolithic 3D integrated logic, power, and optoelectronics technologies for tightly interconnected intelligent systems

Indium tin oxide vertical channel transistors for scaled 4F 2 2T0C gain cell memory with etched sidewall cleaning

Addressing transconductance-bandwidth trade-off by three-dimensional electrolyte-surrounded organic electrochemical transistors

연구실 보유 특허

대학별 입시끈

우리 연구실 모집

교수님 소개

권지민

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Advances and future challenges in monolithic 3D integrated logic, power, and optoelectronics technologies for tightly interconnected intelligent systems

Indium tin oxide vertical channel transistors for scaled 4F 2 2T0C gain cell memory with etched sidewall cleaning

Addressing transconductance-bandwidth trade-off by three-dimensional electrolyte-surrounded organic electrochemical transistors

연구실 보유 특허

최근 3년간 연구실적 높은 연구실

대학별 입시끈

우리 연구실 모집