Sungjae Wi

Sae Hee Lee

Jinyoung Park

Wonho Song

Junhyung Kim

Hoon Hahn Yoon

Jung-Yong Lee

Gahyun Choi

Sungchul Jung

Hanbyul Jin

Youngeun Jeon

Heungseok Go

Our group is dedicated to exploring emergent (new) materials and device structures to overcome the limitations of the current devices in electronic/optoelectronic applications, and also developing novel quantum devices based on the manipulation and detection of unique quantum-mechanical degrees of freedom in condensed matter systems.
We are currently looking for highly motivated graduate students and postdocs. Anyone who is interested in studying new materials and devices for future electronic/optoelectronic applications and also exploring unique quantum-mechanical phenomena in condensed matter systems and the devices based on them is encouraged to contact Prof. Kibog Park (kibogpark@unist.ac.kr). Experimental Condensed Matter Physics and Device Physics

Experimental Condensed Matter Physics and Device Physics

Modulating Electron Energy Barrier at Metal/Semiconductor and Metal/Insulator Contacts with Thin Interfacial Layer

Wide Effective Work-Function Tuning of Al/SiO/Si Junction Achieved with Graphene Interlayer at Al/SiO Interface

Negative Fermi-level Pinning Effect of Metal/n-GaAs (001) Junction with Graphene Interlayer

Edge-over MOSFET with poly-Si thin film channel for achieving thermodynamic limit of subthreshold swing in nanometer scale

Planar Ballistic Electron Emission Spectroscopy for Single-Shot Probing of Energy Barrier Inhomogeneity at Junction Interface

Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction

Largely-Tuned Effective Work-Function of Al/Graphene/SiO

Lowering Effective Dielectric Constant of Ferroelectric Hf0. 5Zr0. 5O2 Film with an Ultra-Thin Al2O3 Intermediae Layer

On-display transparent half-diamond pattern capacitive fingerprint sensor compatible with AMOLED display

Schottky Barrier Inhomogeneity of Pt/4H-SiC Junction Probed by Metal-Base Transistor Ballistic Electron Emission Spectroscopy (BEES)

Highly flexible touch screen panel fabricated with silver nanowire crossing electrodes and transparent bridges

Supporting Information Strong Fermi-Level Pinning at Metal/n-Si (001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer

High-performance plasmonic THz detector based on asymmetric FET with vertically integrated antenna in CMOS technology

Flux-Driven Josephson Parametric Amplifier Fabricated Using the Nb/AlOx/Nb Trilayer Process

revealed by local Schottky barrier height variations over a partially formed 8H-SiC layer on a 4H-SiC substrate

Multi-Level Capacitive Memory Effect in Metal/Oxide/Floating-Schottky Junction

Controllable Synthesis of Multifunctional, Two-Dimensional Carbon Sheets at Low Temperatures

Sunday Afternoon, January 25, 2026

Interface Energy Barrier Inhomogeneity of Pt/4H-SiC Schottky Junction Probed by Solid-State Device Version of Ballistic Electron Emission Spectroscopy

Resistive Switching Behaviors of Al-Te Alloy Thin Films Formed by Thermal-Intermixing of Al/Te Bilayer

Beyond CMOS Electronics

Near room-temperature synthesis of transfer-free graphene films

Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

Negative Poisson’s ratios in metal nanoplates

Research on flexible display at Ulsan National Institute of Science and Technology

Growth and Simultaneous Valleys Manipulation of Two-Dimensional MoSe 2 -WSe 2 Lateral Heterostructure

Growth of wrinkle-free graphene on texture-controlled platinum films and thermal-assisted transfer of large-scale patterned graphene

Stretchable dual-capacitor multi-sensor for touch-curvature-pressure-strain sensing

One-step graphene coating of heteroepitaxial GaN films

Monolithic graphene oxide sheets with controllable composition

Strong Fermi-level pinning at metal/n-Si (001) interface ensured by forming an intact Schottky contact with a graphene insertion layer

Facile synthesis of few-layer graphene with a controllable thickness using rapid thermal annealing

One-dimensional assembly on two-dimensions: AuCN nanowire epitaxy on graphene for hybrid phototransistors

Performance enhancement of plasmonic sub-terahertz detector based on antenna integrated low-impedance silicon MOSFET

Ferroelectric enhancement of La-doped BaTiO3 thin films using SrTiO3 buffer layer

In situ observations of gas phase dynamics during graphene growth using solid-state carbon sources

Quantum well state of self-forming inclusions in SiC determined by ballistic electron emission microscopy

Method for manufacturing graphene, transparent electrode and active layer comprising the same, and display, electronic device, optoelectronic device, battery, solar cell, and …

Schottky barrier modulation of metal/4H-SiC junction with thin interface spacer driven by surface polarization charge on 4H-SiC substrate

Emergent Materials & Devices Lab

교수님 소개

박기복

연구실 소개

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Planar Ballistic Electron Emission Spectroscopy for Single-Shot Probing of Energy Barrier Inhomogeneity at Junction Interface

Interface Energy Barrier Inhomogeneity of Pt/4H-SiC Schottky Junction Probed by Solid-State Device Version of Ballistic Electron Emission Spectroscopy

Resistive Switching Behaviors of Al-Te Alloy Thin Films Formed by Thermal-Intermixing of Al/Te Bilayer

연구실 보유 특허

대학별 입시끈

우리 연구실 모집

교수님 소개

박기복

연구실 키워드

알럼나이가 간 회사

연구실 지원 방법

대우 조건

연도별 논문 인용수

저널 & 학회 논문 출판 수

연구실 논문 목록

Planar Ballistic Electron Emission Spectroscopy for Single-Shot Probing of Energy Barrier Inhomogeneity at Junction Interface

Interface Energy Barrier Inhomogeneity of Pt/4H-SiC Schottky Junction Probed by Solid-State Device Version of Ballistic Electron Emission Spectroscopy

Resistive Switching Behaviors of Al-Te Alloy Thin Films Formed by Thermal-Intermixing of Al/Te Bilayer

연구실 보유 특허

최근 3년간 연구실적 높은 연구실

대학별 입시끈

우리 연구실 모집